Gettering and Defect Engineering in Semiconductor Technology XIV

Volumes 178-179

doi: 10.4028/www.scientific.net/SSP.178-179

Paper Title Page

Authors: David Lysáček, Jan Šik, Petr Bábor

Abstract: We report on a new method of external gettering in silicon substrate for semiconductor applications. The proposed method is based on the...

385
Authors: Vladimir P. Markevich, Anthony R. Peaker, Bruce Hamilton, Valentin V. Litvinov, Yurii M. Pokotilo, Alla N. Petukh, Stanislav B. Lastovskii, Jose Coutinho, Mark J. Rayson, Patrick R. Briddon, Patrick R. Briddon

Abstract: We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room...

392
Authors: Pavel Hazdra, Volodymyr Komarnitskyy, Vilma Buršíková

Abstract: The isotopic effect of hydrogen and deuterium on hydrogenation of radiation defects introduced in n-type float zone and Czochralski silicon...

398
Authors: Mykola Kras'ko, Anatolii Kraitchinskii, Andrii Kolosiuk, Volodymyr Neimash, Vasyl Voitovych, V.A. Makara, Ruslan Petrunya, Vasyl Povarchuk

Abstract: Accumulation kinetics of vacancy-oxygen (VO) complexes in Czochralski (Cz) n-Si at 360 °C and 1 MeV electron pulse irradiation has been...

404
Authors: Pawel Kaminski, Roman Kozlowski, Stanislawa Strzelecka, Andrzej Hruban, Elzbieta Jurkiewicz-Wegner, Miroslaw Piersa, Michal Pawlowski, Marek Suproniuk

Abstract: The charge compensation in undoped GaP single crystals is investigated by modeling the Fermi level position for various concentrations of...

410
Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Adam Barcz, Przemyslaw Romanowski

Abstract: Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016...

416
Authors: Jan Vobecký, Volodymyr Komarnitskyy, Vít Záhlava, Pavel Hazdra

Abstract: Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the...

421
Authors: Aurimas Uleckas, Eugenijus Gaubas, Tomas Ceponis, Kestutis Zilinskas, Rimas Grigonis, Valdas Sirutkaitis, Jan Vanhellemont

Abstract: The characteristics of the band-to-band Auger recombination in Czochralski-grown high resistivity Si and Ge single crystals have been...

427
Authors: Tine Uberg Naerland, Birger Retterstøl Olaisen, Lars Arnberg

Abstract: A review of light soaking of solar cells by the use of commercial IV-characterization instruments is presented. The paper addresses the...

435
Authors: Wolfgang Wille, Ralph Rothemund, Gerald Meinhardt, Wolfgang Jantsch

Abstract: Instead of selective emitter technology we investigate an alternative way to optimize contact formation and increased blue responsivity of...

441

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