Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity

Abstract:

Accumulation kinetics of vacancy-oxygen (VO) complexes in Czochralski (Cz) n-Si at 360 °C and 1 MeV electron pulse irradiation has been investigated. It is shown that during the irradiation and simultaneous generation and annealing of VO centers, the accumulation kinetics has non-linear dependence with saturation. It is found that there is a maximal concentration of VO centers, which depends on the radiation intensity (J) and temperature as well. It is also established the annealing of VO centers can substantially be stimulated by the intensity of electron irradiation. An increase of J from 1.25×10¹⁵ to 1.25×10¹⁶ electrons/(сm²s) does not influence the generation efficiency of VO, though it accelerates their annealing by more than one order of magnitude.

• Periodical: Solid State Phenomena (Volumes 178-179)
• Pages: 404-409
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.178-179.404
• Online since: August 2011
• Authors: Mykola Kras'ko, Anatolii Kraitchinskii, Andrii Kolosiuk, Volodymyr Neimash, Vasyl Voitovych, V.A. Makara, Ruslan Petrunya, Vasyl Povarchuk
• Keywords: Electron Irradiation, Irradiation Intensity, Silicon, Vacancy Oxygen Complex

References

[1] E. Simoen, J.M. Rafi, C. Claeys, V. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tishchenko, V. Voytovych, J. Versluys, P. Clauws, Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon, Jpn. J. Appl. Phys. 42 (2003).

DOI: 10.1143/jjap.42.7184

[2] E. Simoen, C. Claeys, V. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tishchenko, V. Voytovych, A deep level study of high-temperature electron-irradiated n-type silicon, Sol. St. Phenom. 95–96 (2004) 367.

DOI: 10.4028/www.scientific.net/ssp.95-96.367

[3] V. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, V. Tishchenko, E. Simoen, J.M. Rafi, C. Claeys, J. Versluys, O. De Gryse, P. Clauws, DLTS studies of high-temperature electron irradiated Cz n-Si, Phys. Stat. Sol. (a) 201 (2004) 509.

DOI: 10.1002/pssa.200306750

[4] V.P. Markevich, A.R. Peaker, S.B. Lastovskii, V.E. Gusakov, I.F. Medvedeva and L.I. Murin, Formation of radiation-induced defects in Si crystals irradiated with electrons at elevated temperatures, Sol. St. Phenom. 156–158 (2010) 299.

DOI: 10.4028/www.scientific.net/ssp.156-158.299

[5] J. -G. Xu, F. Lu and H. -H. Sun, Electrical and optical properties of defects in silicon introduced by high-temperature electron irradiation, Phys. Rev. B 38 (1988) 3395.

DOI: 10.1103/physrevb.38.3395

[6] J. Lalita, B.G. Svensson and C. Jagadich, Point defects observed in crystalline silicon implanted by MeV Si ions at elevated temperatures, Nucl. Instr. and Meth. in Phys. Res. B 96 (1995) 210.

DOI: 10.1016/0168-583x(94)00484-6

[7] A.N. Kraitchinskii, L.V. Mizrukhin, V.I. Shakhovtsov, The lifetime of primary radiation defects in silicon, Zh. Tekhn. Fiz. 58 (1988) 1180.