Paper Title:
Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity
  Abstract

Accumulation kinetics of vacancy-oxygen (VO) complexes in Czochralski (Cz) n-Si at 360 °C and 1 MeV electron pulse irradiation has been investigated. It is shown that during the irradiation and simultaneous generation and annealing of VO centers, the accumulation kinetics has non-linear dependence with saturation. It is found that there is a maximal concentration of VO centers, which depends on the radiation intensity (J) and temperature as well. It is also established the annealing of VO centers can substantially be stimulated by the intensity of electron irradiation. An increase of J from 1.25×1015 to 1.25×1016 electrons/(сm2s) does not influence the generation efficiency of VO, though it accelerates their annealing by more than one order of magnitude.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 9: Gettering, Passivation and Defect Engineering
Edited by
W. Jantsch and F. Schäffler
Pages
404-409
DOI
10.4028/www.scientific.net/SSP.178-179.404
Citation
M. Kras'ko, A. Kraitchinskii, A. Kolosiuk, V. Neimash, V. Voitovych, V.A. Makara, R. Petrunya, V. Povarchuk, "Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity", Solid State Phenomena, Vols. 178-179, pp. 404-409, 2011
Online since
August 2011
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Cheng Liang Miao, Guo Dong Zhang, Cheng Jia Shang
Abstract:Compressive deformation behaviors of low carbon steels with different Nb contents were investigated in the temperature range 900oC to 1100oC...
62
Authors: You Gang Wang, Xiang Feng Liu
Chapter 7: Building Materials
Abstract:Rocks and other rocklike solid materials have inherent defects inside. The defects of rock will be evolved under loading. The evolution...
1597
Authors: Bin Wang, He Ming Zhang, Hui Yong Hu, Yu Ming Zhang, Bin Shu, Chun Yu Zhou, Yu Chen Li
Chapter 11: Optical/Electronic/Magnetic Materials
Abstract:This paper presents a physical-based model for accumulation PMOS capacitor based on strained-Si/SiGe material. With this model, the physical...
1968
Authors: Rabia Y. Khosa, Einar Ö. Sveinbjörnsson
3.1: SiC-Oxide Interface and MOS Structures Characterisation
Abstract:We find a clear correlation between the density of near-interface traps (NITs) in n-type 4H-SiC MOS capacitors and the strength of a...
147