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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Conversion Efficiency of Radiation Damage Profiles...

Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles

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Abstract:

By introducing radiation damage and hydrogen and successively annealing with low thermal budgets, hydrogen-related donors are created in oxygen-lean silicon. Hydrogen-related donor profiles are induced in float-zone silicon by implanting hydrogen and/or helium and successive annealing with or without additional hydrogen introduction by a hydrogen plasma. The efficiency of the conversion of the radiation-induced damage into the hydrogen-related donors differs in dependence of the method of damage and hydrogen introduction. In proton implanted samples, the ultimate introduction rate of the donors is significantly lower than it is in helium and hydrogen co-implanted samples. Furthermore, the depth distribution of the hydrogen-related donors shows a deviance from the simulated distribution of the radiation damage induced by proton implantation not seen in case of helium-induced damage. The change in doping efficiency is discussed in respect to the hydrogen content in the different experiments.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

375-384

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.375

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Online since:

August 2011

Authors:

Johannes G. Laven, Reinhard Job, Werner Schustereder, Hans Joachim Schulze, Franz Josef Niedernostheide, Holger Schulze, Lothar Frey

Keywords:

High-Purity Silicon, Hydrogen-Related Donors, Proton Implantation Doping

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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