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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Deep Level Defects in 4H-SiC Schottky Diodes...

Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS

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Abstract:

Deep-level defects in 4H-SiC Schottky diodes were studied using deep level transient spectroscopy (DLTS). The epitaxial layers, doped with N and grown on standard n+4H-SiC substrates were exposed to aluminium ion implantation process under the Schottky contact and of junction termination extension (JTE). The studies performed within 80-400 K temperature range revealed five deep electron traps, with a dominant double peak at around room temperature related to the Z1/Z2 defect. The thorough analysis of the DLTS-line shape and DLTS-line behaviour on DLTS measurement conditions made possible to distinguish and identify all the observed deep levels.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

366-371

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.366

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Online since:

August 2011

Authors:

Łukasz Gelczuk, Maria Dabrowska-Szata, Mariusz Sochacki, Jan Szmidt

Keywords:

Deep Level, DLTS, Silicon Carbide (SiC)

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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