Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS
Deep-level defects in 4H-SiC Schottky diodes were studied using deep level transient spectroscopy (DLTS). The epitaxial layers, doped with N and grown on standard n+4H-SiC substrates were exposed to aluminium ion implantation process under the Schottky contact and of junction termination extension (JTE). The studies performed within 80-400 K temperature range revealed five deep electron traps, with a dominant double peak at around room temperature related to the Z1/Z2 defect. The thorough analysis of the DLTS-line shape and DLTS-line behaviour on DLTS measurement conditions made possible to distinguish and identify all the observed deep levels.
W. Jantsch and F. Schäffler
Ł. Gelczuk et al., "Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS", Solid State Phenomena, Vols. 178-179, pp. 366-371, 2011