Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

N.A. Sobolev; Anton E. Kalyadin; Elena I. Shek; V.I. Vdovin; David I. Tetel`baum; Lyudmila I. Khirunenko

doi:10.4028/www.scientific.net/SSP.178-179.341

Paper Titles

Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
p.313

Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon
p.319

Oxygen Precipitation Studied by X-Ray Diffraction Techniques
p.325

Investigation of Defects in Solar Cells and Wafers by Means of Magnetic Measurements
p.331

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
p.341

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
p.347

In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction
p.353

Structural Defect Studies of Semiconductor Crystals with Laue Topography
p.360

Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS
p.366

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Luminescent and Structural Properties of...

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

Abstract:

Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XIV

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

341-346

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.341

Citation:

Cite this paper

Online since:

August 2011

Authors:

N.A. Sobolev, Anton E. Kalyadin, Elena I. Shek, V.I. Vdovin, David I. Tetel`baum, Lyudmila I. Khirunenko

Keywords:

Annealing, Defect, Dislocation, Ion Implantation, Luminescence, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] N.A. Sobolev, O.B. Gusev, E.I. Shek, V.I. Vdovin, T.G. Yugova, A.M. Emel`yanov, Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature, Appl. Phys. Lett. 72 (1998) 3326-3328.

DOI: 10.1063/1.121593

Google Scholar

[2] N.A. Sobolev, Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence (Review), Semiconductors 44 (2010) 1-23.

DOI: 10.1134/s106378261001001x

Google Scholar

[3] N.A. Sobolev, A.M. Emel'yanov, V.I. Sakharov, I.T. Serenkov, E.I. Shek, D.I. Tetel'baum, Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing, Semiconductors 41 (2007) 537-539.

DOI: 10.1134/s1063782607050107

Google Scholar

[4] M. Wzorek, A. Czerwinski, J. Ratajczak, A. Misiuk, B. Surma, J. Kątcki, Defect structure in self-implanted silicon annealed under enhanced hydrostatic pressure – electron microscopy study, phys. stat. sol. (c) 4 (2007) 3020-3024.

DOI: 10.1002/pssc.200675496

Google Scholar

[5] T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holleman, P. LeMinh, J. Schmitz, Engineering of dislocation-loops for light emission from silicon diodes, Sol. St. Phenomena 131-133 (2008) 303-308.

DOI: 10.4028/www.scientific.net/ssp.131-133.303

Google Scholar

[6] N.A. Sobolev, A.E. Kalyadin, R.N. Kyutt, V.I. Sakharov, I.T. Serenkov, E.I. Shek, V.V. Afrosimov, D.I. Tetel`baum, Photoluminescence in silicon implanted by silicon ions at amorphizing doses, Semiconductors 45 (2011) 1182-1187.

DOI: 10.1134/s1063782611090181

Google Scholar

[7] N.A. Sobolev, V.I. Sakharov, I.T. Serenkov, V.I. Vdovin, Combined MEIS/TEM study of structural defects in Si implanted with a high dose of 100 keV Si ions, Superlattices and Microstructures 45 (2009) 177-181.

DOI: 10.1016/j.spmi.2008.12.011

Google Scholar

[8] N.A. Sobolev, V.I. Sakharov, I.T. Serenkov, A.E. Kalyadin, V.I. Vdovin, Proton backscattering by point and extended defects in ion-implanted Si, phys. stat. sol. (c) 6 (2009) 1807-1810.

DOI: 10.1002/pssc.200881463

Google Scholar

[9] N.S. Minaev, A.V. Mudryi, Thermally-induced defects in silicon containing oxygen and carbon, phys. stat. sol. A68 (1981) 561-565.

DOI: 10.1002/pssa.2210680227

Google Scholar

[10] V. Kveder, V. Badylevich, E. Steinman, A. Izotov, M. Zeibt, W. Schreter, Room-temperature silicon light-emitting diodes based on dislocation luminescence, Appl. Phys. Lett. 84 (2004) 2106-2108.

DOI: 10.1063/1.1689402

Google Scholar

[11] E.O. Sveinbjornsson, J. Weber, Room temperature electroluminescence from dislocation-rich silicon, Appl. Phys. Lett. 69 (1996) 2686-2688.

DOI: 10.1063/1.117678

Google Scholar

[12] S. Binetti, M. Donghi, S. Pizzini, A. Сastaldini, A. Сavallini, F. Fraboni, N.A. Sobolev, Erbium in silicon: problems and challenges, Sol. St. Phenomena 57-58 (1997) 197-206.

DOI: 10.4028/www.scientific.net/ssp.57-58.197

Google Scholar

[13] N.A. Sobolev, A.M. Emel`yanov, E.I. Shek, O.V. Feklisova, E.B. Yakimov, T.V. Kotereva, Influence of the deformation on the luminescence properties of Si light-emitting diodes, phys. stat. sol. (c) 2 (2005) 1842-1846.

DOI: 10.1002/pssc.200460514

Google Scholar