Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.
W. Jantsch and F. Schäffler
N.A. Sobolev et al., "Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions", Solid State Phenomena, Vols. 178-179, pp. 341-346, 2011