Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions

Abstract:

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Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

341-346

DOI:

10.4028/www.scientific.net/SSP.178-179.341

Citation:

N.A. Sobolev et al., "Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions", Solid State Phenomena, Vols. 178-179, pp. 341-346, 2011

Online since:

August 2011

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Price:

$35.00

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