Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon
The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not well understood yet. We investigated the defects and donator complexes using positron lifetime measurements and Doppler-broadening spectroscopy. In particular, the influence of variations in implantation dose, annealing temperature and annealing time on crystal defects were examined in Czochralski and in float zone silicon samples. Due to well known positron lifetimes in silicon an identification of certain defect complexes was possible.
W. Jantsch and F. Schäffler
A. J. Schriefl et al., "Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon", Solid State Phenomena, Vols. 178-179, pp. 319-324, 2011