Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon

Andreas J. Schriefl; Sokratis Sgouridis; Werner Schustereder; Werner Puff

doi:10.4028/www.scientific.net/SSP.178-179.319

Paper Titles

Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications
p.295

Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon
p.301

TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
p.307

Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
p.313

Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon
p.319

Oxygen Precipitation Studied by X-Ray Diffraction Techniques
p.325

Investigation of Defects in Solar Cells and Wafers by Means of Magnetic Measurements
p.331

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
p.341

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
p.347

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Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon

Abstract:

The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not well understood yet. We investigated the defects and donator complexes using positron lifetime measurements and Doppler-broadening spectroscopy. In particular, the influence of variations in implantation dose, annealing temperature and annealing time on crystal defects were examined in Czochralski and in float zone silicon samples. Due to well known positron lifetimes in silicon an identification of certain defect complexes was possible.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

319-324

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.319

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Online since:

August 2011

Authors:

Andreas J. Schriefl, Sokratis Sgouridis, Werner Schustereder, Werner Puff

Keywords:

Positron Annihilation, Proton Implantation, Silicon

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