Oxygen Precipitation Studied by X-Ray Diffraction Techniques

Mojmir Meduna; Ondřej Caha; Jiri Ruzicka; Silvie Bernatovà; Milan Svoboda; Jiří Buršík

doi:10.4028/www.scientific.net/SSP.178-179.325

Paper Titles

Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon
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TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
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Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
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Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon
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Oxygen Precipitation Studied by X-Ray Diffraction Techniques
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Investigation of Defects in Solar Cells and Wafers by Means of Magnetic Measurements
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Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
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Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
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In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction
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Oxygen Precipitation Studied by X-Ray Diffraction Techniques

Abstract:

We report on study of oxygen precipitates grown in Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry. The analysis of diffraction curves in Laue geometry was done using Takagi equations and statistical dynamical theory of diffraction. These techniques allow us to determine as the radius of defect area as the defect concentrations from measurement in Laue geometry. These results obtained on silicon wafers exposed to two-step and three-step treatments were compared with other experimental techniques including transmission electron microscopy and infrared absorption spectroscopy, while only the largest precipitates are detected by other techniques. The results of all methods are in good agreement.