Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon

Abstract:

The results of investigations of solar grade mc-Si by means of combination of scanning X-ray beam excited optical luminescence microscopy (SXEOL), X-ray beam induced current (XBIC) and X-ray fluorescence (XRF) are presented. It was found, that for relatively clean sample SXEOL and XBIC provide similar information about the recombination activity of defects while for the samples with a high transition metal content there are significant differences in the provided information. The reasons of the revealed XBIC - SXEOL differences are discussed.

• Periodical: Solid State Phenomena (Volumes 178-179)
• Pages: 301-306
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.178-179.301
• Online since: August 2011
• Authors: Maxim Trushin, O.F. Vyvenko, Winfried Seifert, André Klossek, Ivo Zizak, Martin Kittler
• Keywords: Multicrystalline Silicon, X-Ray Beam Induced Current (XBIC), X-Ray Excited Optical Luminescence Microscopy (μ-SXEOL), X-Ray Fluorescence (XRF)

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