Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon

Abstract:

Article Preview

The results of investigations of solar grade mc-Si by means of combination of scanning X-ray beam excited optical luminescence microscopy (SXEOL), X-ray beam induced current (XBIC) and X-ray fluorescence (XRF) are presented. It was found, that for relatively clean sample SXEOL and XBIC provide similar information about the recombination activity of defects while for the samples with a high transition metal content there are significant differences in the provided information. The reasons of the revealed XBIC - SXEOL differences are discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

301-306

DOI:

10.4028/www.scientific.net/SSP.178-179.301

Citation:

M. Trushin et al., "Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon", Solid State Phenomena, Vols. 178-179, pp. 301-306, 2011

Online since:

August 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.