New Results on the Bound Exciton Luminescence in Germanium

Abstract:

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Photoluminescence from excitons bound to shallow donors or acceptors was studied in Al-, As-, B-, Ga- and P-doped Ge. Excitons bound to Al and B acceptors were identified for the first time. The dissociation energy of the excitons satisfies Haynes rule and changes with a factor of 0.1 linearly with the ionization energy of the dopants.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

289-294

DOI:

10.4028/www.scientific.net/SSP.178-179.289

Citation:

M. Allardt et al., "New Results on the Bound Exciton Luminescence in Germanium", Solid State Phenomena, Vols. 178-179, pp. 289-294, 2011

Online since:

August 2011

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Price:

$35.00

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