New Results on the Bound Exciton Luminescence in Germanium

Abstract:

Photoluminescence from excitons bound to shallow donors or acceptors was studied in Al-, As-, B-, Ga- and P-doped Ge. Excitons bound to Al and B acceptors were identified for the first time. The dissociation energy of the excitons satisfies Haynes rule and changes with a factor of 0.1 linearly with the ionization energy of the dopants.

• Periodical: Solid State Phenomena (Volumes 178-179)
• Pages: 289-294
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.178-179.289
• Online since: August 2011
• Authors: Matthias Allardt, Vladimir Kolkovsky, Sabine Kolodinski, Nikolay V. Abrosimov, K. Irmscher, Paul Clauws, Jörg Weber, Kai Zuber
• Keywords: Bound Exciton, Germanium, Haynes Rule, Luminescence

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