New Results on the Bound Exciton Luminescence in Germanium
Photoluminescence from excitons bound to shallow donors or acceptors was studied in Al-, As-, B-, Ga- and P-doped Ge. Excitons bound to Al and B acceptors were identified for the first time. The dissociation energy of the excitons satisfies Haynes rule and changes with a factor of 0.1 linearly with the ionization energy of the dopants.
W. Jantsch and F. Schäffler
M. Allardt et al., "New Results on the Bound Exciton Luminescence in Germanium", Solid State Phenomena, Vols. 178-179, pp. 289-294, 2011