Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon

Michael Seibt; Philipp Saring; Philipp Hahne; Linda Stolze; M.A. Falkenberg; Carsten Rudolf; Doaa Abdelbarey; Henning Schuhmann

doi:10.4028/www.scientific.net/SSP.178-179.275

Paper Titles

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
p.253

Stress Relaxation Mechanism by Strain in the Si-SiO₂ System and its Influence on the Interface Properties
p.259

Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Interface Properties
p.263

Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements
p.267

Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon
p.275

Spectroscopic Studies of Iron and Chromium in Germanium
p.285

New Results on the Bound Exciton Luminescence in Germanium
p.289

Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications
p.295

Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon
p.301

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Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon

Abstract:

This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm^-2 are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi₂ platelets, internal gettering of copper by NiSi₂ precipitates and site-determination of copper atoms in NiSi₂.