Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon

Abstract:

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This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm-2 are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi2 platelets, internal gettering of copper by NiSi2 precipitates and site-determination of copper atoms in NiSi2.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

275-284

DOI:

10.4028/www.scientific.net/SSP.178-179.275

Citation:

M. Seibt et al., "Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon", Solid State Phenomena, Vols. 178-179, pp. 275-284, 2011

Online since:

August 2011

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Price:

$35.00

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