Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

Abstract:

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Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

253-258

DOI:

10.4028/www.scientific.net/SSP.178-179.253

Citation:

V. Vdovin et al., "Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers", Solid State Phenomena, Vols. 178-179, pp. 253-258, 2011

Online since:

August 2011

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Price:

$35.00

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