The dislocation-related luminescence (DRL) in the vicinity of D1 band (0.8 eV) in hydrophilically bonded n- and p-type silicon wafers is investigated by means of recently developed pulsed trap refilling enhanced luminescence technique (Pulsed-TREL). The shallow and deep dislocation related electronic states in both upper and lower part of the band gap are determined and characterized by means of DLTS. Among those traps we have established ones which directly participate in D1 DRL. We have shown that D1 luminescence goes via shallow dislocation related states (SDRS) located close to the conduction and valence bands with thermal activation energy of about 0.1 eV whereas deep levels do not participate in D1 DRL. The model explaining the fact how the 0.8 eV luminescence may go through levels which interlevel energy is at least 0.97 eV in terms of Coulomb interaction between ionized SDRS is suggested.