Paper Title:
XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source
  Abstract

It is shown that the X-ray beam induced current method (XBIC) can be realized at the laboratory X-ray source using the polycapillary x-ray optics. The images of iron contaminated grain boundaries in multicrystalline Si are obtained. It is shown that the grain boundary XBIC contrast is 2-3 times smaller than the EBIC one. A simulation of XBIC and EBIC contrast values for two-dimensional defects is carried out and a good correlation between the experimental and calculated values is obtained. The dependence of grain boundary XBIC contrast on the X-ray beam width is calculated.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 6: Extended Defects
Edited by
W. Jantsch and F. Schäffler
Pages
226-229
DOI
10.4028/www.scientific.net/SSP.178-179.226
Citation
R. R. Fahrtdinov, O. V. Feklisova, M. V. Grigoriev, D. V. Irzhak, D. V. Roshchupkin, E. B. Yakimov, "XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source", Solid State Phenomena, Vols. 178-179, pp. 226-229, 2011
Online since
August 2011
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Price
$35.00
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