XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source

Rashid R. Fahrtdinov; Olga V. Feklisova; Maxim V. Grigoriev; Dmitry V. Irzhak; Dmitry V. Roshchupkin; Eugene B. Yakimov

doi:10.4028/www.scientific.net/SSP.178-179.226

Paper Titles

Recombination at Oxide Precipitates in Silicon
p.205

Iron Gettering at Slip Dislocations in Czochralski Silicon
p.211

Formation of Voids in SiO₂/Si Substrate by Zn Implantation and Thermal Annealing
p.217

Effects of Ultrasonic Cleaning on Carrier Lifetimes and Photovoltage in Monocrystalline Silicon
p.221

XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source
p.226

Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface
p.233

Analysis of Contaminated Oxide-Silicon Interfaces
p.243

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films
p.249

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
p.253

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179XBIC Investigation of the Grain Boundaries in...

XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source

Abstract:

It is shown that the X-ray beam induced current method (XBIC) can be realized at the laboratory X-ray source using the polycapillary x-ray optics. The images of iron contaminated grain boundaries in multicrystalline Si are obtained. It is shown that the grain boundary XBIC contrast is 2-3 times smaller than the EBIC one. A simulation of XBIC and EBIC contrast values for two-dimensional defects is carried out and a good correlation between the experimental and calculated values is obtained. The dependence of grain boundary XBIC contrast on the X-ray beam width is calculated.