Formation of Voids in SiO₂/Si Substrate by Zn Implantation and Thermal Annealing

Abstract:

There are investigated the structural properties of ⁶⁴Zn⁺ ion-beam induced nano-size voids in as implanted and subsequent furnace annealing SiO^{Superscript text}2/Si(100) substrates. Then ⁶⁴Zn⁺ ions with energy of E=100keV were implanted into SiO₂ layer to a fluence of D=2×10¹⁴cm^-2. After this furnace thermal annealing at temperature 400°C during 1h in neutral (nitrogen) atmosthere was made. It is revealed, that in as-implanted sample the surface is non-uniform and there is some structurization of a SiO₂ layer. In this state, metal Zn NPs an order of ten nm in diameter are formed in the depth region around the projected range. There is thus a net flux of Zn out of the nanoparticles (NPs) into an oxide layer closer to the surface. As Zn has a big diffusion constant and a high vaper pressure there are occured out-diffusion of Zn from a SiO₂ surface layer. The volume occupied by the Zn NPs becomes a void. It results to formation of cavities, which combining among themselves, form voids.

• Periodical: Solid State Phenomena (Volumes 178-179)
• Pages: 217-220
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.178-179.217
• Online since: August 2011
• Authors: V. Vladimir Privezentsev, Pavel N. Chernykh, Dmitrii V. Petrov
• Keywords: Ion Implantation, SiO₂, Thermal Annealing, Void, Zn Impurity

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