Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

Helge Malmbekk; Lasse Vines; Edouard V. Monakhov; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/SSP.178-179.192

Paper Titles

1207cm^-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
p.172

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon
p.183

Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation
p.188

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon
p.192

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon
p.201

Recombination at Oxide Precipitates in Silicon
p.205

Iron Gettering at Slip Dislocations in Czochralski Silicon
p.211

Formation of Voids in SiO₂/Si Substrate by Zn Implantation and Thermal Annealing
p.217

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Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

Abstract:

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at E_v+0.27 eV and E_c-0.32 eV have been observed (E_v and E_c denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125 C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at E_c-0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.