1207cm^-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal

Abstract:

Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared absorption band at 1207cm-1 can be newly observed in the case of carbon content being above 1.7×1017/cm3, whose intensity increases with an increase of carbon concentration in silicon crystal. More interestingly, the 1207cm-1 band cannot be influenced by the long-time annealing in the temperature range of 450-1250oC, suggesting the high thermal stability of this carbon-related defect, which might be related to the presence of silicon carbide in silicon crystals.

• Periodical: Solid State Phenomena (Volumes 178-179)
• Pages: 172-177
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.178-179.172
• Online since: August 2011
• Authors: Lin Chen, Xue Gong Yu, Peng Chen, Xin Gu, Jing Gang Lu, De Ren Yang
• Keywords: Carbon Impurity, Infrared Absorption, Silicon Crystal

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