1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared absorption band at 1207cm-1 can be newly observed in the case of carbon content being above 1.7×1017/cm3, whose intensity increases with an increase of carbon concentration in silicon crystal. More interestingly, the 1207cm-1 band cannot be influenced by the long-time annealing in the temperature range of 450-1250oC, suggesting the high thermal stability of this carbon-related defect, which might be related to the presence of silicon carbide in silicon crystals.
W. Jantsch and F. Schäffler
L. Chen et al., "1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal", Solid State Phenomena, Vols. 178-179, pp. 172-177, 2011