Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon

Nikolai Yarykin; Jörg Weber

doi:10.4028/www.scientific.net/SSP.178-179.154

Paper Titles

Surface Corrugation and Stacking Misorientation in Multilayers of Graphene on Nickel
p.125

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.
p.130

The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon
p.139

IR Studies on VO_N, C_IO_I and C_IC_S Defects in Ge-Doped Cz-Si
p.147

Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon
p.154

Towards the Tailoring of P Diffusion Gettering to As-Grown Silicon Material Properties
p.158

Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin
p.166

1207cm^-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
p.172

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Formation of Copper-Related Deep-Level Centers in...

Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon

Abstract:

Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused from the Cu-contaminated surface into previously irradiated samples at 350 K. The most abundant Cu-related complexes formed due to this procedure are the same as in the case of previously studied Cu-diffused Cz-Si.