Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon
Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused from the Cu-contaminated surface into previously irradiated samples at 350 K. The most abundant Cu-related complexes formed due to this procedure are the same as in the case of previously studied Cu-diffused Cz-Si.
W. Jantsch and F. Schäffler
N. Yarykin and J. Weber, "Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon", Solid State Phenomena, Vols. 178-179, pp. 154-157, 2011