Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon

Abstract:

Article Preview

Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused from the Cu-contaminated surface into previously irradiated samples at 350 K. The most abundant Cu-related complexes formed due to this procedure are the same as in the case of previously studied Cu-diffused Cz-Si.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

154-157

DOI:

10.4028/www.scientific.net/SSP.178-179.154

Citation:

N. Yarykin and J. Weber, "Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon", Solid State Phenomena, Vols. 178-179, pp. 154-157, 2011

Online since:

August 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.