Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

Chi Kwong Tang; Lasse Vines; Bengt Gunnar Svensson; Eduard Monakhov

doi:10.4028/www.scientific.net/SSP.178-179.183

Paper Titles

Towards the Tailoring of P Diffusion Gettering to As-Grown Silicon Material Properties
p.158

Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin
p.166

1207cm^-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
p.172

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon
p.183

Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation
p.188

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon
p.192

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon
p.201

Recombination at Oxide Precipitates in Silicon
p.205

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Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

Abstract:

The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using capacitance-voltage measurements (CV) and deep level transient spectroscopy (DLTS). Introduction of hydrogen was performed by wet chemical etching and subsequent reverve bias annealing of Al Schottky diodes. The treatment led to the appearance of the defect level characteristic to interstitial iron (Fe_i) with a corresponding decrease in the concentration of the Fe-B pair. Concentration versus depth profiles of the defects show that dissociation of Fe-B occurs in the depletion region and capacitance-voltage measurements unveil a decrease in the charge carrier concentration due to passivation of B. These quantitative observations imply strongly that H promotes dissociation of Fe-B releasing Fe_i whereas no detectable passivation of Fe-B or Fe_i by H occurs.