Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation

Julien Nicolai; Nelly Burle; Bernard Pichaud

doi:10.4028/www.scientific.net/SSP.178-179.188

Paper Titles

Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin
p.166

1207cm^-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
p.172

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon
p.183

Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation
p.188

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon
p.192

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon
p.201

Recombination at Oxide Precipitates in Silicon
p.205

Iron Gettering at Slip Dislocations in Czochralski Silicon
p.211

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Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation

Abstract:

High temperature annealing effects on Oxygen-induced defects formation has been studied by IR-LST, FTIR and TEM techniques. The results show that most defects are amorphous oxygen precipitates and/or dislocations. Ham’s theory has been modified in order to take into account the variations of interstitial oxygen concentration during the formation of precipitates. Comparison between experimental data and simulation shows that the specificity of annealing cycle is to combine both nucleation and growth stages. The morphology and stoechiometry of SiOx precipitates are also studied.