Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation

Abstract:

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High temperature annealing effects on Oxygen-induced defects formation has been studied by IR-LST, FTIR and TEM techniques. The results show that most defects are amorphous oxygen precipitates and/or dislocations. Ham’s theory has been modified in order to take into account the variations of interstitial oxygen concentration during the formation of precipitates. Comparison between experimental data and simulation shows that the specificity of annealing cycle is to combine both nucleation and growth stages. The morphology and stoechiometry of SiOx precipitates are also studied.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

188-191

DOI:

10.4028/www.scientific.net/SSP.178-179.188

Citation:

J. Nicolai et al., "Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation", Solid State Phenomena, Vols. 178-179, pp. 188-191, 2011

Online since:

August 2011

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Price:

$35.00

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