Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties

Daniel Kropman; Enn Mellikov; Tiit Kärner; Ivo Heinmaa; Tõnu Laas; Charalampos A. Londos; Andrzej Misiuk

doi:10.4028/www.scientific.net/SSP.178-179.263

Paper Titles

Analysis of Contaminated Oxide-Silicon Interfaces
p.243

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films
p.249

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
p.253

Stress Relaxation Mechanism by Strain in the Si-SiO₂ System and its Influence on the Interface Properties
p.259

Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Interface Properties
p.263

Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements
p.267

Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon
p.275

Spectroscopic Studies of Iron and Chromium in Germanium
p.285

New Results on the Bound Exciton Luminescence in Germanium
p.289

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Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Interface Properties

Abstract:

The results of an investigation of the point defects (PD) generation, redistribution and interaction with impurities in the Si-SiO₂ system during the process of its formation in use of of electron paramagnetic resonance (EPR) and nuclear magnetic resonance (NMR) spectra are presented. The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation conditions: temperature, cooling rate, oxidation time and impurity content. The difference between interface properties of n- and p-type wafers could be related to different Fermi level position at the interface and to different PD densities in volume.