Spectroscopic Studies of Iron and Chromium in Germanium

Yana Gurimskaya; Daniel Mathiot; Abdelmadjid Mesli

doi:10.4028/www.scientific.net/SSP.178-179.285

Paper Titles

Stress Relaxation Mechanism by Strain in the Si-SiO₂ System and its Influence on the Interface Properties
p.259

Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Interface Properties
p.263

Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements
p.267

Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon
p.275

Spectroscopic Studies of Iron and Chromium in Germanium
p.285

New Results on the Bound Exciton Luminescence in Germanium
p.289

Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications
p.295

Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon
p.301

TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
p.307

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Spectroscopic Studies of Iron and Chromium in...

Spectroscopic Studies of Iron and Chromium in Germanium

Abstract:

We report on the electronic properties of Fe and Cr in n-type germanium using conventional and Laplace DLTS techniques, which in the case of Schottky barriers, are restricted to levels located in the upper half of the band gap. In this work we present extensive DLTS and Laplace DLTS results, re-examining various basic properties of Fe and Cr in n-type Ge samples. In addition our analysis bring new insights into the microscopic behavior of these two chemical species such as their interactions with hydrogen present as an unwanted contaminant, giving rise to the generation of other related levels in the band gap.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

285-288

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.285

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Online since:

August 2011

Authors:

Yana Gurimskaya, Daniel Mathiot, Abdelmadjid Mesli

Keywords:

Deep-Level Transient Spectroscopy, Defect, Electronic Properties, Germanium, Transition Metal

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