Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements

Ivan Starkov; Stanislav Tyaginov; Hubert Enichlmair; Jong Mun Park; Hajdin Ceric; Tibor Grasser

doi:10.4028/www.scientific.net/SSP.178-179.267

Paper Titles

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films
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Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
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Stress Relaxation Mechanism by Strain in the Si-SiO₂ System and its Influence on the Interface Properties
p.259

Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Interface Properties
p.263

Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements
p.267

Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon
p.275

Spectroscopic Studies of Iron and Chromium in Germanium
p.285

New Results on the Bound Exciton Luminescence in Germanium
p.289

Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications
p.295

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Accurate Extraction of MOSFET Unstressed Interface...

Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements

Abstract:

The interface state density profile for an unstressed transistor has been carefully extracted. The experimental evidence of profile non-uniformity is presented. A scheme to separate the bulk oxide trap contribution from the total charge pumping current is suggested as an improvement to the conventional extraction procedure. The obtained information is of high importance in the context of hot-carrier degradation modeling in order to allow for a more detailed verification of the model.