Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements

Abstract:

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The interface state density profile for an unstressed transistor has been carefully extracted. The experimental evidence of profile non-uniformity is presented. A scheme to separate the bulk oxide trap contribution from the total charge pumping current is suggested as an improvement to the conventional extraction procedure. The obtained information is of high importance in the context of hot-carrier degradation modeling in order to allow for a more detailed verification of the model.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

267-272

DOI:

10.4028/www.scientific.net/SSP.178-179.267

Citation:

I. Starkov et al., "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements", Solid State Phenomena, Vols. 178-179, pp. 267-272, 2011

Online since:

August 2011

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Price:

$35.00

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