Structural Defect Studies of Semiconductor Crystals with Laue Topography
A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a μPCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140°C and the in-situ capability of the setup is demonstrated.
W. Jantsch and F. Schäffler
A. Gröschel et al., "Structural Defect Studies of Semiconductor Crystals with Laue Topography", Solid State Phenomena, Vols. 178-179, pp. 360-365, 2011