Structural Defect Studies of Semiconductor Crystals with Laue Topography

Abstract:

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A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a μPCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140°C and the in-situ capability of the setup is demonstrated.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

360-365

DOI:

10.4028/www.scientific.net/SSP.178-179.360

Citation:

A. Gröschel et al., "Structural Defect Studies of Semiconductor Crystals with Laue Topography", Solid State Phenomena, Vols. 178-179, pp. 360-365, 2011

Online since:

August 2011

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Price:

$35.00

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