Structural Defect Studies of Semiconductor Crystals with Laue Topography

Alexander Gröschel; Johannes Will; Christoph Bergmann; Hannes Grillenberger; Stefan Eichler; Max Scheffer Czygan; Andreas Magerl

doi:10.4028/www.scientific.net/SSP.178-179.360

Paper Titles

Investigation of Defects in Solar Cells and Wafers by Means of Magnetic Measurements
p.331

Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
p.341

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
p.347

In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction
p.353

Structural Defect Studies of Semiconductor Crystals with Laue Topography
p.360

Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS
p.366

Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles
p.375

Polycrystalline Silicon Layers with Enhanced Thermal Stability
p.385

Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals
p.392

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Structural Defect Studies of Semiconductor...

Structural Defect Studies of Semiconductor Crystals with Laue Topography

Abstract:

A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a μPCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140°C and the in-situ capability of the setup is demonstrated.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XIV

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

360-365

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.360

Citation:

Cite this paper

Online since:

August 2011

Authors:

Alexander Gröschel, Johannes Will, Christoph Bergmann, Hannes Grillenberger, Stefan Eichler, Max Scheffer Czygan, Andreas Magerl

Keywords:

Annealing, Dislocation, GaAs, In Situ, Oxygen Precipitates, Silicon, Topography, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Authier, Dynamical theory of X-ray diffraction. Oxford: Oxford University Press, 2001.

Google Scholar

[2] A. Danilewsky, J. Wittge, A. Rack, T. Weitkamp, R. Simon, T. Baumbach, P. McNally. White beam topography of 300 mm Si wafers. J. Mater. Sci.: Mater Electron. 19 (2008) 269-272.

DOI: 10.1007/s10854-007-9480-5

Google Scholar

[3] H. Grillenberger, A. Magerl. In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-Rays. Solid State Phenomena. 156-158 (2010) 437-441

DOI: 10.4028/www.scientific.net/ssp.156-158.437

Google Scholar

[4] J. M. Hwang, D. K. Schroder. Recombination properties of oxygen-precipitated silicon. J. Appl. Phys. 59 (1986) 2476-2487.

DOI: 10.1063/1.336993

Google Scholar

[5] M. Porrini, P. Tessariol. Minority carrier lifetime of p-type silicon containing oxygen precipitates: influence of injection level and precipitate size/density. Mat. Sci. Eng. B, 73 (2000) 244-249.

DOI: 10.1016/s0921-5107(99)00472-9

Google Scholar

[6] J. Fillard, P. Gall, M. Asgarinia, M. Castagne, M. Baroudi. EL2° distribution in the vicinity of dislocations in GaAs-In materials. Jpn. J. Appl. Phys. 27 (1988) 899-902.

DOI: 10.1143/jjap.27.l899

Google Scholar

[7] P. Wickert, R. Stibal, P. Hiesinger, W. Jantz, J. Wagner. High Resolution EL2 and Resistivity Topography of SI GaAs Wafers. Proc. SIMC-X (1998) 21-24.

DOI: 10.1109/sim.1998.785068

Google Scholar

[8] S. Eichler, F. Börner, T. Bünger, M. Jurisch, A. Köhler, U. Kretzer, M. Scheffer-Czygan, B. Weinert, T. Flade. Recent Progress in GaAs Growth Technologies at FREIBERGER, in: P. Capper H. Scheel (Eds.), Crystal Growth Technology. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008, pp.231-266.

DOI: 10.1002/9783527623440.ch9

Google Scholar

[9] Information on http://kr-01-020-pc3.physik.uni-erlangen.de/~groeschel/GADEST2011/

Google Scholar