Gettering and Defect Engineering in Semiconductor Technology XIV

Volumes 178-179

doi: 10.4028/www.scientific.net/SSP.178-179

Paper Title Page

Authors: Vincent Quemener, Mari Alnes, Lasse Vines, Ola Nilsen, Helmer Fjellvåg, Eduard Monakhov, Bengt Gunnar Svensson

Abstract: ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated...

130
Authors: Vladimir V. Voronkov, Robert Falster, Karsten Bothe, Bianca Lim, Jan Schmidt

Abstract: Illumination-induced degradation of minority carrier lifetime was studied in n-type Czochralski silicon co-doped with phosphorus and boron....

139
Authors: Charalamos A. Londos, Efstratia N. Sgourou, A. Andrianakis, Andrzej Misiuk, Valentin V. Emtsev, H. Ohyama

Abstract: This paper reports experimental results on the production and annealing of oxygen-vacancy related (VOn, 1<n<5) and...

147
Authors: Nikolai Yarykin, Jörg Weber

Abstract: Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused...

154
Authors: Jasmin Hofstetter, Jean François Lelièvre, David P. Fenning, Mariana I. Bertoni, Tonio Buonassisi, Carlos del Cañizo

Abstract: The evolution of Fe-related defects is simulated for di erent P di usion gettering (PDG) processes which are applied during silicon solar...

158
Authors: Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, H. Riemann

Abstract: The effect of tin on the formation and temperature transformation of VO centers in Ge upon annealing has been investigated. It was found...

166
Authors: Lin Chen, Xue Gong Yu, Peng Chen, Xin Gu, Jing Gang Lu, De Ren Yang

Abstract: Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared...

172
Authors: Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii

Abstract: In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light...

178
Authors: Chi Kwong Tang, Lasse Vines, Bengt Gunnar Svensson, Eduard Monakhov

Abstract: The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using...

183
Authors: Julien Nicolai, Nelly Burle, Bernard Pichaud

Abstract: High temperature annealing effects on Oxygen-induced defects formation has been studied by IR-LST, FTIR and TEM techniques. The results show...

188

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