Gettering and Defect Engineering in Semiconductor Technology XIV

Volumes 178-179

doi: 10.4028/

Paper Title Page

Authors: Helge Malmbekk, Lasse Vines, Edouard V. Monakhov, Bengt Gunnar Svensson

Abstract: Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using...

Authors: Zhen Hui Wang, Xiang Yang Ma, De Ren Yang

Abstract: Oxygen precipitation (OP) and annihilation of voids in heavily phosphorus (P)-doped Czochralski (Cz) silicon have been investigated. It was...

Authors: John D. Murphy, Karsten Bothe, Rafael Krain, Massimiliano Olmo, Vladimir V. Voronkov, Robert J. Falster

Abstract: Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon...

Authors: Kevin Lauer, Martin Herms, Anett Grochocki, Joachim Bollmann

Abstract: The impact of slip dislocations on the interstitial iron distribution in as-grown CZ silicon wafers is investigated by calibrated MWPCD...

Authors: V. Vladimir Privezentsev, Pavel N. Chernykh, Dmitrii V. Petrov

Abstract: There are investigated the structural properties of 64Zn+ ion-beam induced nano-size voids in as implanted and...

Authors: A.B. Nadtochiy, Oleg Korotchenkov, Markus Drapalik, Viktor Schlosser

Abstract: Effects of a kHz-frequency ultrasonic cleaning of silicon wafers on free carrier lifetimes and the photovoltage magnitude are addressed. It...

Authors: Rashid R. Fahrtdinov, Olga V. Feklisova, Maxim V. Grigoriev, Dmitry V. Irzhak, Dmitry V. Roshchupkin, Eugene B. Yakimov

Abstract: It is shown that the X-ray beam induced current method (XBIC) can be realized at the laboratory X-ray source using the polycapillary x-ray...

Authors: Anton Bondarenko, Oleg Vyvenko, Iliya Kolevatov, Ivan Isakov, Oleg Kononchuk

Abstract: The dislocation-related luminescence (DRL) in the vicinity of D1 band (0.8 eV) in hydrophilically bonded n- and p-type silicon wafers is...

Authors: Maria Luisa Polignano, Davide Codegoni, Luca Castellano, Stefano Greco, Gabriella Borionetti, Francesco Bonoli, Andreas Nutsch, Roswitha Altmann, Andreas Liebold, Michael Otto, Paolo Monge, Caterina Riva

Abstract: Methods for the analysis of the oxide-silicon interface were compared for their ability to reveal metal segregation at the interface and...

Authors: Xiang Yang Ma, Li Ming Fu, De Ren Yang

Abstract: Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx)...


Showing 31 to 40 of 80 Paper Titles