Gettering and Defect Engineering in Semiconductor Technology XIV

Volumes 178-179

doi: 10.4028/www.scientific.net/SSP.178-179

Paper Title Page

Authors: Victor Tapio Rangel-Kuoppa, Gang Chen, Wolfgang Jantsch

Abstract: The electrical properties of dome-shaped and pyramid-shaped Ge Quantum Dots (QDs) embedded in p-type Silicon are reported....

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Authors: Victor Tapio Rangel-Kuoppa, Alexander Tonkikh, Nikolay Zakharov, Peter Werner, Wolfgang Jantsch

Abstract: We investigate self-assembled pyramid-shaped Ge Quantum Dots (QDs) with lateral dimensions of 15 nm, and heights of 2.5-3 nm. These Ge QDs...

72
Authors: George A. Rozgonyi, Khaled M. Youssef, P. Kulshreshtha, M. Shi, Ethan Good

Abstract: Nanoindentation was used to measure the mechanical properties of 200mm diameter (100) CZ Si wafers subjected to the initiation and...

79
Authors: Dominik Lausch, Ronny Bakowskie, Michael Lorenz, S. Schweizer, Kai Petter, Christian Hagendorf

Abstract: In this contribution a classification of recombination active defects in multicrystalline silicon solar cells made from electronic grade...

88
Authors: Vasilii E. Gusakov

Abstract: In the present work the results of theoretical analysis of the process of diffusion of covalently bonded atoms (interstitial oxygen atoms)...

94
Authors: Teimuraz Mchedlidze, J. Hendrik Zollondz, Martin Kittler

Abstract: Thin crystalline silicon films on glass substrate, fabricated using solid phase crystallization for application in thin-film solar cells,...

100
Authors: Eugene B. Yakimov, Olga V. Feklisova, Sergei K. Brantov

Abstract: Investigations of silicon layers grown on carbon foil were carried out using the Electron Beam Induced Current (EBIC) methods. The most of...

106
Authors: Teimuraz Mchedlidze, Tzanimir Arguirov, Martin Kittler

Abstract: Multi-quantum wells (MQW) with nanometer thick crystalline Si layers are considered among the promising light absorbers for application in...

110
Authors: Winfried Seifert, Daniel Amkreutz, Tzanimir Arguirov, Hans Michael Krause, Manfred Schmidt

Abstract: The properties of electron-beam crystallized, large-grained silicon layers of about 10 µm thickness on glass have been studied by combining...

116
Authors: Vito Raineri, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Emanuele Rimini, Filippo Giannazzo

Abstract: Graphene films were grown on thin polycrystalline Ni using a buried amorphous carbon (a-C) layer as C source. Rapid thermal processes (RTP)...

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