Multiferroic Memory: A Disruptive Technology or Future Technology?

Abstract:

The term "Multiferroic" is coined for a material possessing at least two ferroic orders in the same or composite phase (ferromagnetic, ferroelectric, ferroelastic); if the first two ferroic orders are linearly coupled together it is known as a magnetoelectric (ME) multiferroic. Two kinds of ME multiferroic memory devices are under extensive research based on the philosophy of "switching of polarization by magnetic fields and magnetization by electric fields." Successful switching of ferroic orders will provide an extra degree of freedom to create more logic states. The "switching of polarization by magnetic fields" is useful for magnetic field sensors and for memory elements if, for example, polarization switching is via a very small magnetic field from a coil underneath an integrated circuit. The electric control of magnetization is suitable for nondestructive low-power, high-density magnetically read and electrically written memory elements. If the system possesses additional features, such as propagating magnon (spin wave) excitations at room temperature, additional functional applications may be possible. Magnon-based logic (magnonic) systems have been initiated by various scientists, and prototype devices show potential for future complementary metal oxide semiconductor (CMOS) technology. Discovery of high polarization, magnetization, piezoelectric, spin waves (magnon), magneto-electric, photovoltaic, exchange bias coupling, etc. make bismuth ferrite, BiFeO₃, one of the widely investigated materials in this decade. Basic multiferroic features of well known room temperature single phase BiFeO₃ in bulk and thin films have been discussed. Functional magnetoelectric (ME) properties of some lead-based solid solution perovskite multiferroics are presented and these systems also have a bright future. The prospects and the limitations of the ME-based random access memory (MERAM) are explained in the context of recent discoveries and state of the art research.

• Periodical: Solid State Phenomena (Volume 189)
• Pages: 1-14
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.189.1
• Online since: June 2012
• Authors: Ashok Kumar, Nora Ortega, Sandra Dussan, Shalini Kumari, Dilsom Sanchez, James Scott, Ram Katiyar
• Keywords: Bilayers, FeRAM, Magnonic Logics, MERAM, MRAM, Multiferroic, Non-Volatile Memory (NVM), Superlattice, Thin Film, Ultrathin Films

References

[1] G. Moore: Fairchild Semiconductor internal publication (1964).

[2] J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig and R. Ramesh: Science Vol. 299 (2003), p.1719.

DOI: 10.1126/science.1080615

[3] W. Eerenstein, N. D. Mathur, and J. F. Scott: Nature Vol. 442 (2006), p.759.

[4] T. Kimura, T. Goto, H. Shintani, K. Ishizaka, T. Arima and Y. Tokura: Nature Vol. 426 (2003), p.55.

DOI: 10.1038/nature02018

[5] M. Fiebig, Th. Lottermoser, D. Fröhlich, A. V. Goltsev and R. V. Pisarev: Nature Vol. 419 (2002), p.818.

DOI: 10.1038/nature01077

[6] N. A. Spaldin, S. W. Cheong and R. Ramesh: Phys. Today Vol. 63 (2010), p.38.

[7] J. F. Scott and C. A. Paz de Araujo: Science Vol. 246 (1989), p.1400.

[8] D. A. Sanchez, N. Ortega, A. Kumar, R. Roque-Malherbe, R. Polanco, J. F. Scott and R. S. Katiyar: AIP Advances Vol. 1 (2011) p.042169.

DOI: 10.1063/1.3670361

[9] A. Kumar, G. L. Sharma, R. S. Katiyar, J. F. Scott, R. Pirc and R. Blinc: J. Phys. Condens. Matter. Vol. 21 (2009), p.382204.

DOI: 10.1088/0953-8984/21/38/382204

[10] A. Kumar, R.S. Katiyar and J. F. Scott: IEEE Trans. Ultrason., Ferroelectr., Freq. Control Vol. 57 (2010), p.2237.

[11] S. Dussan, A. Kumar, S. Priya, J. F. Scott and R. S. Katiyar: Appl. Phys. Lett. Vol. 97 (2010), p.252902.

DOI: 10.1063/1.3528210

[12] S. Dussan, A. Kumar, R. S. Katiyar, S. Priya and J. F. Scott: J. Phys.: Condens. Matter. Vol. 23 (2011), p.202203.

DOI: 10.1088/0953-8984/23/20/202203

[13] Y. H. Chu, L.W. Martin, M. B. Holcomb and R. Ramesh: Mater. Today Vol. 10 (2007), p.16.

[14] D. Khomskii: Physics Vol. 2, (2009), p.20.

[15] D. V. Efremov, J. van den Brink and D. I. Khomskii: Nat. Mater. Vol. 3 (2004), p.853.

[16] B. B. Van Aken, T. T. M. Palstra, A. Filippetti, and N. A. Spaldin: Nat. Mater. Vol. 3 (2004), p.164.

[17] Y. Tokura and S. Seki: Adv. Mater. Vol. 22 (2010), p.1554.

[18] P. Curie: J. de Physique, Vol. 3 (1894), p.393.

[19] I. E. Dzyaloshinsky: J. Phys. Chem. Solids. Vol. 4 (1958), p.241.

[20] T. Moriya: Phys. Rev. Vol. 120 (1960), p.91.

[21] I. E. Dzyaloshinskii: J. Exp. Theor. Phys. Vol. 37 (1960), p.628.

[22] D. N. Astrov: J. Exp. Theor. Phys. Vol. 13 (1961), p.729. [Zh. Eksp. Teor. Fiz. Vol. 40 (1961) p.1035. ].

[23] A. Kumar, R. S. Katiyar and A. S. Bhalla: Ferroelectrics (under submission).

[24] M. Fiebig: J. Phys. D: Appl. Phys. Vol. 38 (2005), p. R123.

[25] T. H. O'Dell: Phil. Mag. Vol. 8 (1963), p.411.

[26] F. Brown Jr, R. M. Hornreich and S. Shtrikman: Phys. Rev. Vol. 168 (1968), p.574.

[27] I. Dzyaloshinskii: Europhys. Lett. Vol. 96 (2011), p.17001.

[28] R. Pirc and R. Blinc: Phys. Rev. B. Vol. 76 (2007), p. 020101R.

[29] A. Kumar, G. L. Sharma, R. S. Katiyar, R. Pirc, R. Blinc and J. F. Scott: J. Phys.: Condens. Matter. Vol. 21 (2009), p.382204.

DOI: 10.1088/0953-8984/21/38/382204

[30] R. Pirc, R. Blinc and J. F. Scott: Phys. Rev. B. Vol. 79 (2009), p.214114.

[31] A. Kumar, R. S. Katiyar and J. F. Scott: J. Appl. Phys. Vol. 108 (2010), p.064105.

[32] R. Pirc and R. Blinc: Phys. Rev. B. Vol. 60 (1999), p.13470.

[33] By definition, and ; thus M is in Am-1.

[34] K. Uchino, S. Nomura,. L. E. Cross, S. J. Jang and R. E. Newnham: J. Appl. Phys. Vol. 51 (1980), p.1142.

[35] J. Ma, J. Hu, Z. Li and C-W Nan: Adv. Mater. Vol. 23 (2011), p.1062.

[36] J. Van Suchtelen: Philips Res. Rep. Vol. 27 (1972), p.28.

[37] J. H. Kim, B. E. Park and H. Ishiwara: Jpn. J. Appl. Phys. Vol. 47 (2008), p.8472.

[38] H. Ishiwara: Curr. Appl. Phys. Vol. 9 (2009), p S2.

[39] A. Chung, J. Deen, J-S Lee and M. Meyyappan: Nanotechnology Vol. 21 (2010), p.412001.

[40] A. Kumar, Ram S. Katiyar and J. F. Scott: Appl. Phys. Lett. Vol. 94 (2009) p.212903.

[41] D. N. Astrov: J. Exp. Theor. Phys. Vol. 11 (1960), p.708. [ Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki. Vol. 38 (1960), p.984. ].

[42] V. J. Folen, G. T. Rado and E.W. Stalder: Phys. Rev. Lett. Vol. 6 (1961), p.607.

[43] R. Martinez, R. Palai, H. Huhtinen, J. Liu, J. F. Scott and R. S. Katiyar: Phys. Rev. B. Vol. 82 (2010), p.134104.

[44] H. Y. Hwang, S-W. Cheong, N. P. Ong and B. Batlogg: Phys. Rev. Lett. Vol. 77 (1996). p. (2041).

[45] W. Reohr,  H. Honigschmid,  R.  Robertazzi, D. Gogl,  F. Pesavento,  S. Lammers,.  K. Lewis, C. Arndt,  Y. Lu,  H. Viehmann, R. Scheuerlein,  L-K Wang,  P. Trouilloud,  S. Parkin,  W. Gallagher and G. Muller: IEEE Circuits Devices Mag. Vol. 18 (2002).

DOI: 10.1109/mcd.2002.1035347

[46] J. G. Zhu: Proc. IEEE Vol. 96 (2008), p.1786.

[47] S. Kim, S. Lee and H. Shin: Jpn. J. Appl. Phys. Vol. 49 (2010), p. 04DM07.

[48] X. Chen, A. Hochstrat, P. Borisov and W. Kleemann: Appl. Phys. Lett. Vol. 89, (2006) p.202508.

DOI: 10.1063/1.2388149

[49] M. Gajek, M. Bibes, S. Fusil, K. Bouzehouane, J. Fontcuberta, A. Barthélémy and A. Fert: Nat. Mater. Vol. 6 (2007), p.296.

DOI: 10.1038/nmat1860

[50] V. Garcia, M. Bibes, L. Bocher, S. Valencia, F. Kronast, A. Crassous, X. Moya, S. Enouz-Vedrenne, A. Gloter, D. Imhoff, C. Deranlot, N. D. Mathur, S. Fusil, K. Bouzehouane and A. Barthélémy: Science Vol. 327 (2010), p.1106.

DOI: 10.1126/science.1184028

[51] J. T. Heron, M. Trassin, K. Ashraf, M. Gajek, Q. He, S. Y. Yang, D. E. Nikonov, Y-H. Chu, S. Salahuddin and R. Ramesh: Phys. Rev. Lett. Vol. 107 (2011), p.217202.

DOI: 10.1103/physrevlett.107.217202

[52] Y-H Chu, L. W. Martin, M. B. Holcomb, M. Gajek, S-J Han, Q. He, N. Balke, Ch-H Yang, D. Lee, W. Hu, Q Zhan, P-L Yang, A. Fraile-Rodríguez, A. Scholl, S X. Wang, and R. Ramesh: Nat. Mater. Vol. 7 (2008), p.478.

DOI: 10.1038/nmat2184

[53] T. Zhao, A. Scholl, F. Zavaliche, K. Lee, M. Barry, A. Doran, M. P. Cruz, Y. H. Chu, C. Ederer, N. A. Spaldin, R. R. Das, D. M. Kim, S. H. Baek, C. B. Eom and R. Ramesh: Nat. Mater. Vol. 5 (2006) p.823.

DOI: 10.1038/nmat1731

[54] J. -M. Hu, Z. Li, L. -Q. Chen and C. -W. Nan: Nat. Commun. Vol. 1564 (2011) p.1.

[55] M. Cazayous, Y. Gallais, A. Sacuto, R. de. Sousa, D. Lebeugle and D. Colson: Phys. Rev. Lett. Vol. 101 (2008) p.037601.

DOI: 10.1103/physrevlett.101.037601

[56] M. K. Singh, Ram S. Katiyar and J. F. Scott: J. Phys. Condens. Mater. Vol. 20 (2008), p.252203.

[57] A. Kumar, N. M. Murari and R. S. Katiyar: Appl. Phys. Lett. Vol. 92 (2008), p.152907.

[58] A. Kumar, J. F. Scott and R. S. Katiyar: Appl. Phys. Lett. Vol. 99 (2011), p.062504.

[59] M. P. Kostylev, A. A. Serga, T. Schneider, B. Leven and B. Hillebrands: Appl. Phys . Lett. Vol. 87 (2005), p.153501.

DOI: 10.1063/1.2089147

[60] V. V. Kruglyak, S. O. Demokritov and D. Grundler: J. Phys. D: Appl. Phys. Vol. 43 (2010), p.264001.

[61] A. Khitun, M. Bao and K. L. Wang: J. Phys. D: Appl. Phys. Vol. 43 (2010), p.264005.