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Statistical Analysis of the Assembly-Induced Degradation of the Silicon Device Parameters
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Mechanical Strain Relaxation during Lattice-Mismatched Epitaxial Growth
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Interfacial Dislocations in the GaSb/GaAs (001) Heterostructure
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Statistical Analysis of the Assembly-Induced...

Statistical Analysis of the Assembly-Induced Degradation of the Silicon Device Parameters

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

541-550

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.541

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Online since:

January 1991

Authors:

F. Gaiseanu

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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