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Evaluation of DLTS Measurements in the Case of "Broadened" Spectra or a Barrier Limited Capture Process
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B-Ion Implantation into Mo-Film for Shallow Junction Formation: DLTS Analyses on the p⁺/n Fabricated Diodes
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Electrical Evaluation of Silicon on Insulator Structures Formed by Oxygen Implantation by Means of Frequency Resolved Photoconductivity Measurements
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Nonlinear Recombination and Diffusion Processes in Si and GaAs
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Carrier Recombination Processes in PbTe Films by Picosecond IR Excitation
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Investigation on Electrical Contacts on N-Type Silicon
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Diagnostics of Defects from the Noise Spectra
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Statistical Analysis of the Assembly-Induced Degradation of the Silicon Device Parameters
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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20Nonlinear Recombination and Diffusion Processes in...

Nonlinear Recombination and Diffusion Processes in Si and GaAs

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

517-522

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.517

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Online since:

January 1991

Authors:

D. Noreika, V. Netiksis, M. Petrauskas, M. Lenzner

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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