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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20XPS Sputter Depth Profiling Applid to the Analysis...

XPS Sputter Depth Profiling Applid to the Analysis of Si/SiO₂, Si/SiO_xN_y and Si/Si₃N₄

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Gettering and Defect Engineering in Semiconductor Technology IV

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Periodical:

Solid State Phenomena (Volumes 19-20)

Pages:

593-598

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20.593

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Online since:

January 1991

Authors:

O. Benkherourou, J.P. Deville

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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