XPS Sputter Depth Profiling Applid to the Analysis of Si/SiO2, Si/SiOxNy and Si/Si3N4

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Periodical:

Solid State Phenomena (Volumes 19-20)

Edited by:

M. Kittler and H. Richter

Pages:

593-598

DOI:

10.4028/www.scientific.net/SSP.19-20.593

Citation:

O. Benkherourou and J.P. Deville, "XPS Sputter Depth Profiling Applid to the Analysis of Si/SiO2, Si/SiOxNy and Si/Si3N4", Solid State Phenomena, Vols. 19-20, pp. 593-598, 1991

Online since:

January 1991

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$35.00

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