Analysis of Oxidized Copper Surface and its Evolution

Francesca Milanesi; Francesco Pipia; Simona Spadoni; Salvo Grasso; Enrica Ravizza; Mario Pistoni; Mauro Alessandri

doi:10.4028/www.scientific.net/SSP.195.119

Paper Titles

Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features
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The Risk of Pattern Collapse for Structures in Future Logic Devices
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Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue Removal
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Wet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process
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Analysis of Oxidized Copper Surface and its Evolution
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Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning
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Removing W Polymer Residue from BEOL Structures Using DSP⁺ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study
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UV-Induced Modification of Fluorocarbon Polymer: Effect of Treatment Atmosphere and Aging on Dissolution in Organic Solvent
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One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues
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HomeSolid State PhenomenaSolid State Phenomena Vol. 195Analysis of Oxidized Copper Surface and its...

Analysis of Oxidized Copper Surface and its Evolution

Abstract:

The interest towards Copper RDL (Re-Distribution Layer) is due to some advantages related to this approach. First of all it is cheaper than conventional Damascene approach; moreover it allows thicknesses as high as 10µm or more whereas with Damascene architecture Cu thickness is limited to <5µm. Figure 1 introduces the architecture concept, which is based on a quite long ECD growth on a substrate with patterned PhotoResist.