One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues

William R. Gemmill; Els Kesters; Quoc Toan Le

doi:10.4028/www.scientific.net/SSP.195.136

Paper Titles

Analysis of Oxidized Copper Surface and its Evolution
p.119

Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning
p.124

Removing W Polymer Residue from BEOL Structures Using DSP⁺ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study
p.128

UV-Induced Modification of Fluorocarbon Polymer: Effect of Treatment Atmosphere and Aging on Dissolution in Organic Solvent
p.132

One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues
p.136

Determination of Fluoride Concentration on Aluminum Bond Pads Using Liquid Phase Extraction Ion Chromatography
p.139

Selective High-Throughput TiN Etching Methods
p.143

The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition
p.146

Development of Integrated Wet Cleans for 3D-SIC Technologies
p.150

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One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues

Abstract:

Back end of the line processing requires removal of deposited polymers resulting from etch processes. These polymers typically exist on the whole of the pattern including the dielectric sidewalls and can be removed by wet cleans or a combination of wet cleans and plasma treatments. When a porous dielectric is present these residues cannot be efficiently removed using plasma or certain wet cleans without potentially damaging the underlying porous dielectric layer. Therefore there exists a need for a one-step wet clean that can completely remove the residues without damaging the porous dielectric. Previous work has shown that a combination of a UV pretreatment followed by a wet clean can remove these residues [1]. These residues are composed of CF, -CF₂, and CF₃ groups as described by X-ray photoelectron spectroscopy (XPS). In an effort to improve the manufacturing viability of such a process we have undertaken a study to develop a one-step wet clean for fluoropolymer removal. Utilizing a blanket checkerboard pattern with a model fluoropolymer deposited on a porous low-κ substrate we have demonstrated the one-step wet clean of the aforementioned fluoropolymer while maintaining compatibility with the pristine and etch processed porous low-k dielectric.