Selective High-Throughput TiN Etching Methods

Emanuel I. Cooper; Rekha Rajaram; Makonnen Payne; Steven Lippy

doi:10.4028/www.scientific.net/SSP.195.143

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Selective High-Throughput TiN Etching Methods
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HomeSolid State PhenomenaSolid State Phenomena Vol. 195Selective High-Throughput TiN Etching Methods

Selective High-Throughput TiN Etching Methods

Abstract:

Titanium nitride (TiN) is widely used as a hard mask film protecting the inter-level dielectric (ILD) before metal or plating seed layer deposition steps. It is common practice to use a wet etch in order to remove residues formed during the ILD dry-etch step, and at the same time to remove some or all of the exposed TiN. From its thermochemical properties, it might be predicted that wet etching of TiN should be easy, since it is quite unstable with respect to both plain and oxidative hydrolysis. For example, in acidic solutions at 25°C [1, :