Indium Tin Oxide Films Grown at Room Temperature by RF-Magnetron Sputtering in Oxygen-Free Environment

Article Preview

Abstract:

Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95∙10-3 mbar and sputtering power of 50 W, the transmittance was near 90% at 500 nm and resistivity was 5.4∙10-4 Ohm∙cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volume 200)

Pages:

10-13

Citation:

Online since:

April 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Kim and C. M. Gilmore, Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices, J. Appl. Phys. 86 (1999) 6451.

DOI: 10.1063/1.371708

Google Scholar

[2] O. Tuna, Y. Selamet, G. Aygun and L. Ozyuzer, High quality ITO thin films grown by DC and RF sputtering without oxygen, J. Phys. D: Appl. Phys. 43 (2010) 055402.

DOI: 10.1088/0022-3727/43/5/055402

Google Scholar

[3] M.J. Chuang, ITO films prepared by long-throw magnetron sputtering without oxygen partial pressure, J. Mater. Sci. Technol. 26 (2010) 577-583.

DOI: 10.1016/s1005-0302(10)60088-6

Google Scholar

[4] W.-F. Wu and B.-S. Chiou, Properties of radio-frequency magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing, Thin Solid Films. 247 (1994) 201-207.

DOI: 10.1016/0040-6090(94)90800-1

Google Scholar