Optical and Electrical Properties of Transparent TiO2 Thin-Film Developed by Electron Beam-Evaporation

M.H. Mangrola; B.H. Parmar; A.S. Pillai; Vibhutikumar Joshi

doi:10.4028/www.scientific.net/SSP.209.169

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HomeSolid State PhenomenaSolid State Phenomena Vol. 209Optical and Electrical Properties of Transparent...

Optical and Electrical Properties of Transparent TiO₂ Thin-Film Developed by Electron Beam-Evaporation

Abstract:

Transparent thin film of TiO2 is deposited on glass substrate by e-beam evaporation method with the pressure, deposition rate, and substrate temperature of 3.0 x 10-6m.bar, 3 nm/s and 100 0C respectively. The film is annealed at 500 0C for about 1 hour. The structural property of the films has been studied using GIXRD. The optical property of the film has been studied using UV-Visible and Photoluminescence spectroscopy (PL). Photoluminescence spectra shows intense and sharp peak at 440 nm. The dielectric property of the film is studied by measuring capacitance at different frequencies at room temperature. It is observed that the capacitance decreases with increase in frequency but at high frequency, the capacitance becomes constant. GIXRD data indicates the crystalline property of the film.

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Solid State Phenomena (Volume 209)

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169-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.209.169

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Online since:

November 2013

Authors:

M.H. Mangrola, B.H. Parmar, A.S. Pillai, Vibhutikumar Joshi

Keywords:

Dielectric Property, e-Beam, GIXRD, PL, TiO₂, UV

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