Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Nikolay G. Galkin; Dmitry Yan; Evgeniy Anatolievich Chusovitin; Anton Borisovich Rasin; Konstantin Nickolaevich Galkin; Mikhail Victorovich Bozhenko; Vsevolod Vladimirovich Mararov; Valentin Mironovich Astashinsky; Aleksey Mikhailovich Kuzmitsky

doi:10.4028/www.scientific.net/SSP.213.90

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Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Abstract:

Measurements of radiative properties of porous silicon after compression plasma treatment have been carried out. Significant increase of photoluminescence intensity and blue shift of spectra have been observed on studied samples in comparison with porous layers formed on monocrystalline silicon without preliminary plasma treatment. An influence of long storage of plasma modified porous silicon layer on the intensity and spectral composition of photoluminescence has been checked. A rise of PL intensity during first moth of storage and following decrease of PL intensity in the next three months has been observed. Mechanisms of changes in a spectral composition of PL and alterations of PL intensity during storage have been discussed.

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Periodical:

Solid State Phenomena (Volume 213)

Pages:

90-95

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.213.90

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Online since:

March 2014

Authors:

Nikolay G. Galkin, Dmitry Yan*, Evgeniy Anatolievich Chusovitin, Anton Borisovich Rasin, Konstantin Nickolaevich Galkin, Mikhail Victorovich Bozhenko, Vsevolod Vladimirovich Mararov, Valentin Mironovich Astashinsky, Aleksey Mikhailovich Kuzmitsky

Keywords:

Compression Plasma Flow, Luminescence, Porous Silicon, Spectral Composition

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References

[1] A.F. Ioffe, Physics of semiconductors, Nauka, Moscow, (1957).

Google Scholar

[2] L.T. Canham, Visible photoluminescence of porous Si, Appl. Phys. Lett., 57 (1990) 1046-1049.

Google Scholar

[3] S. Sawada, N. Namada, N. Ookubo, Mechanism of visible photoluminescence of porous silicon, Phys. Rev. B, 49 (1994) 5236-5245.

DOI: 10.1103/physrevb.49.5236

Google Scholar

[4] D. Dimova-Malinovska, M. Sendova-Vasileva, T. Marinova, V. Krastev, M. Kamenova and N. Tzenov, Correlation between the photoluminescence and chemical bonding in porous silicon, Thin Solid Films, 276 (1996) 290-292.

DOI: 10.1016/0040-6090(94)05652-t

Google Scholar

[5] L. T. Canham, A. Lioni, P.D. Calcott, A.J. Simons, C. Reeves, M.R. Houlton, J.P. Newey, K.J. Nash and T.I. Cox, On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon, Thin Solid Films, 276 (1996).

DOI: 10.1016/0040-6090(95)08072-4

Google Scholar

[6] F. Kozlovski, A. Wiedenhofer, W. Wagenseil, P. Steiner and W. Lang, Stability of photoluminescence and electroluminescence of porous silicon, Thin Solid Films, 276 (1996) 284-286.

DOI: 10.1016/0040-6090(95)08097-x

Google Scholar

[7] T. Dittrich, H. Flietner, V. Yu. Timoshenko and P.K. Kashkarov, Influence of the oxidation process on the luminescence of HF-treated porous silicon, Thin Solid Films, 255 (1997) 149-151.

DOI: 10.1016/0040-6090(94)05642-q

Google Scholar

[8] N.A. Sobolev, Silicon by erbium doped – new semiconductor for optoelectronics, Rus. Chem. Journ., XLV (2001) 95-101.

Google Scholar

[9] S.W. Choi, W.B. Choi, Y.H. Lee and B.K. Ju, Effect of oxygen plasma treatment on anodic bonding, Journ. of Kor. Phys. Soc., 38 (2001) 207-209.

Google Scholar

[10] F.B. Baimbetov, B.M. Ibraev, A.M. Zhukeshov, Silicon surface under the action of compression plasma flow, Semiconductors, 36 (2002) 197-198.

DOI: 10.1134/1.1453436

Google Scholar

[11] N.G. Galkin, E.A. Chusovitin, K.N. Galkin, V.M. Astashinski, A.M. Kuzmitski, A.A. Mishchuk, Morphology, optical properties and band structure parameters of monocrystalline silicon modified by compression plasma flow, Proceedings of Nanomeeting-2007, Ed.: V.E. Borisenko, S.V. Gaponenko, V.S. Gurin, World Scientific Publishing Company, Singapore, (2007).

DOI: 10.1142/9789812770950_0112

Google Scholar

[12] V.M. Astashinski, S.I. Ananin, A.S. Emelyanenko, E.A. Kosytukevich, A.M. Kuzmitski, S.P. Zhvavy, V.V. Uglov, Bulk periodic strucrures formation on monocrystalline silicon surface under the action of compression plasma flow, Applied Surface Science, 253 (2006).

DOI: 10.1016/j.apsusc.2006.03.023

Google Scholar

[13] I.P. Dojcinovic, M.M. Kuraica and J. Puric, Diagnostis of silicon submicron cylindrical structures obtained by plasma flow action, Vacuum, 80 (2006) 1381-1385.

DOI: 10.1016/j.vacuum.2006.01.020

Google Scholar

[14] Y.A. Petukhou, V.V. Uglov, N.T. Kvasov, A.V. Punko, I.L. Dorochevich, V.M. Astashinski, A.M. Kuzmitski, Formation of silicon-based nanostructures by compression plasma flow, Nanomaterials: application and properties (NAP-2011), 1 (2011) 440-447.

DOI: 10.1016/j.apsusc.2012.04.035

Google Scholar