Electron Spin Lifetime Control in GaAs Quantum Well by Means of Electrically Induced Lateral Traps

Andrey V. Larionov; Alexander I. Il'in

doi:10.4028/www.scientific.net/SSP.213.96

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HomeSolid State PhenomenaSolid State Phenomena Vol. 213Electron Spin Lifetime Control in GaAs Quantum...

Electron Spin Lifetime Control in GaAs Quantum Well by Means of Electrically Induced Lateral Traps

Abstract:

Experimental research has been made into coherent spin dynamics of electrons localized in GaAs quantum well planes using an electrically controlled potential. A localizing potential was created by means of a metal gate with submicron windows deposited on the sample surface. The photo-induced magneto-optical Kerr effect was used to study the dependence of electron spin lifetime as a function of temperature, applied bias and magnetic field for gates with various sets of windows. It has been shown that the electrically controlled laterally localizing potential can be used to smoothly vary electron spin lifetime from several hundreds of picoseconds to several tens of nanoseconds. The obtained dependence of spin electron relaxation time on the size of the lateral localization region is in good qualitative agreement with the theoretical prediction.

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Periodical:

Solid State Phenomena (Volume 213)

Pages:

96-100

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.213.96

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Online since:

March 2014

Authors:

Andrey V. Larionov*, Alexander I. Il'in

Keywords:

Coherent Electron Spin Dynamics, Semiconductors Nanostructures

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References

[1] Lommer G., Malcher F. and Roessler U., Spin splitting in semiconductors heterostructures for B ->0, Phys. Rev. Lett., 60, 728 (1988).

DOI: 10.1103/physrevlett.60.728

Google Scholar

[2] I.S. Lyublinskii, Spin relaxation in two-dimensional systems of small scales, JETP Lett., 83, 395-398 (2006).

Google Scholar

[3] A. Greilich, R. Oulton, E.A. Zhukov, I.A. Yugova, D.R. Yakovlev, M. Bayer, A. Shabaev, Al. L. Efros, I.A. Merkulov, V. Stavarache, D. Reuter and A.D. Wieck, Optical control of spin coherence in singly charged (In, Ga)As/GaAs quantum dots, Phys. Rev. Lett., 96, 227401 (2006).

DOI: 10.1002/pssc.200671524

Google Scholar

[4] A.V. Larionov and A.V. Sekretenko, Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells, JETP Lett., 94, 934–938 (2011).

DOI: 10.1134/s0021364011240076

Google Scholar