Preface, Committee and Acknowledgement
Necessity of Cleaning and its Application in Future Memory Devices
p.3
p.3
Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique
p.11
p.11
Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces
p.16
p.16
HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth
p.20
p.20
Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching
p.24
p.24
Aluminum Reduction in SC1
p.28
p.28
Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals
p.32
p.32
Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition
p.36
p.36
Preface, Committee and Acknowledgement
Abstract:
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Periodical:
Solid State Phenomena (Volume 219)
Online since:
September 2014
Сopyright:
© 2015 Trans Tech Publications Ltd. All Rights Reserved
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