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Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals

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Abstract:

Metal contamination impact on transistors’ degradation has been widely studied. Nonetheless, most of the work has been performed on blanket wafers, or based on punctual yield crisis during the integrated circuits’ manufacturing. This paper proposes a comparison of the contamination and metals removal efficiency between blanket wafers and inside deep silicon trenches.

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Periodical:

Solid State Phenomena (Volume 219)

Pages:

32-35

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.32

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Online since:

September 2014

Authors:

Philippe Garnier*, Nathalie Drogue, Romain Duru

Keywords:

Deep Trench, Metal Removal Efficiency, Photo Luminescence, Surface Photo Voltage, VPD ICPMS

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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