Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition

Francesca Milanesi; Silvio Vendrame; Enrica Ravizza; Simona Spadoni; Francesco Pipia; Luisito Livellara

doi:10.4028/www.scientific.net/SSP.219.36

Paper Titles

HF-Last Wet Clean in Combination with a Low Temperature GeH₄-Assisted HCl In Situ Clean Prior to Si_0.8Ge_0.2-on-Si Epitaxial Growth
p.20

Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching
p.24

Aluminum Reduction in SC1
p.28

Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals
p.32

Impact of Surface Treatment of Si₃N₄ on Subsequent SiO₂ Deposition
p.36

Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes
p.40

InGaAs (110) Surface Cleaning Using Atomic Hydrogen
p.47

Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid
p.52

Nanoscale Etching and Reoxidation of InAs
p.56

HomeSolid State PhenomenaSolid State Phenomena Vol. 219Impact of Surface Treatment of Si3N4 on Subsequent...

Impact of Surface Treatment of Si₃N₄ on Subsequent SiO₂ Deposition

Abstract:

In a typical Power Device on the 0.16μm node, the isolation module is one of the most critical steps. The trench to be filled in those devices is rather deep and needs a considerable amount of a suitable dielectric material. The choice of dielectric in the present paper is falling on the SubAtmosphericUndopedSilicaGlass (SAUSG oxide) ^[1].