Nanoscale Etching and Reoxidation of InAs

Dennis H. van Dorp; S. Arnauts; D. Cuypers; J. Rip; F. Holsteyns; S. De Gendt

doi:10.4028/www.scientific.net/SSP.219.56

Paper Titles

Impact of Surface Treatment of Si₃N₄ on Subsequent SiO₂ Deposition
p.36

Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes
p.40

InGaAs (110) Surface Cleaning Using Atomic Hydrogen
p.47

Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid
p.52

Nanoscale Etching and Reoxidation of InAs
p.56

Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers
p.59

Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment
p.63

Surface Cleaning of Graphene by CO₂ Cluster
p.68

Process Control Challenges of Wet Etching Large MEMS Si Cavities
p.73

HomeSolid State PhenomenaSolid State Phenomena Vol. 219Nanoscale Etching and Reoxidation of InAs

Nanoscale Etching and Reoxidation of InAs

Abstract:

At present, the performance enhancement for Si-based transistors can no longer be guaranteed due to intrinsic mobility issues. The considerably higher electron mobility of III-V compound semiconductors (e.g. InGaAs, InAs, InSb) has led to renewed interest and a following phase in the development of future transistors for the 7-5 nm technology node [1].

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Solid State Phenomena (Volume 219)

Pages:

56-58

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.56

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Online since:

September 2014

Authors:

Dennis H. van Dorp*, S. Arnauts, D. Cuypers, J. Rip, F. Holsteyns, S. De Gendt

Keywords:

Cleaning, Etching, Fin-FET, III-V Channel, InAs, Reoxidation

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References

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