Surface Cleaning of Graphene by CO2 Cluster

Hoo Mi Choi; Jang Ah Kim; Yu Jin Cho; Taeh Yun Hwang; Jon Woo Lee; Taesung Kim

doi:10.4028/www.scientific.net/SSP.219.68

Paper Titles

Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid
p.52

Nanoscale Etching and Reoxidation of InAs
p.56

Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers
p.59

Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment
p.63

Surface Cleaning of Graphene by CO₂ Cluster
p.68

Process Control Challenges of Wet Etching Large MEMS Si Cavities
p.73

Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions
p.78

Advanced Monitoring of TMAH Solution
p.81

Effect of Dissolved Oxygen for Advanced Wet Processing
p.85

HomeSolid State PhenomenaSolid State Phenomena Vol. 219Surface Cleaning of Graphene by CO2 Cluster

Surface Cleaning of Graphene by CO₂ Cluster

Abstract:

Graphene has attracted researchers due to its unique physical properties [1]. However, residues on surface can act as contaminants which further have adverse effects on its performance. As synthetic graphene has inherent surface roughness which can also affect the weak adhesion of layers and leakage points. In order to improve the mechanical and electrical properties, the graphene surface should be uncontaminated. In general practice wet cleaning methods, containing hazardous chemical and solvents are used to remove the residues from graphene surface [2, 3]. To avoid chemicals, mechanical cleaning of graphene using contact mode atomic force microscopy (AFM) has been tried. However, the contact mode AFM cleaning is a limited in cleaning area and the cleaning procedure takes a long time. Recently, CO₂ cluster cleaning shows benefits that overcomes these problems. Herein we report the use of CO₂ cluster to clean the graphene surface without affecting its inherent properties for the first time. The CO₂ cluster treated graphene samples were evaluated by AFM for its roughness change and residual contamination.

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Periodical:

Solid State Phenomena (Volume 219)

Pages:

68-70

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.68

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Online since:

September 2014

Authors:

Hoo Mi Choi, Jang Ah Kim, Yu Jin Cho, Taeh Yun Hwang, Jon Woo Lee, Taesung Kim*

Keywords:

Cleaning, CO₂ Cluster, Graphene, Residue, Surface Treatment

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