Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions

Euing Lin; Ted Guo; C.C. Chien; M.H. Chang; Wesley Yu; N.H. Yang; J.F. Lin; J.Y. Wu; Kenneth M. Robb; Alessandro Baldaro; A.N. Other

doi:10.4028/www.scientific.net/SSP.219.78

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Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions
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Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions

Abstract:

As the demand for greater speed in semiconductor devices continues, a typical method of increasing charge mobility is to maximise the silicon strain at the depletion region in p-type transistors through the implementation of “Sigma Cavity” structures in the bulk silicon on either side of the gate structure. These structures, when filled, exhibit a uniaxial strain in the depletion region thus, increasing the charge transport speed [1]. The shape of the Sigma Cavity structure is important in maximising the strain in this region, thus strict control of the shape dimensions is imperative to the electrical performance of the device.