Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor

Vincent Sih; Berthold Reimer; Anthony S. Ratkovich; Jeffrey M. Lauerhaas; Jeffery W. Butterbaugh

doi:10.4028/www.scientific.net/SSP.219.93

Paper Titles

Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions
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Advanced Monitoring of TMAH Solution
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Effect of Dissolved Oxygen for Advanced Wet Processing
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Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping
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Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor
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Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam
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Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution
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Nickel Selective Etch for Contacts on Ge Based Devices
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Study of Wetting of Nanostructures Using Decoration by Etching
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Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor

Abstract:

Selective nitride etching in semiconductor manufacturing is currently performed in wet benches using hot orthophosphoric acid at 160-180C. This process requires silica seasoning to achieve the desired selectivity to silicon oxide. Silica seasoning in wet benches is achieved by etching blanket silicon nitride wafers prior to running productions runs. While, this method of selective silicon nitride etching has been successful in the past, particle requirements at advanced nodes [1] are driving the need for a new solution. Single wafer wet processing is proposed as a way to meet these challenging new particle specifications.