Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution

Yuichi Ogawa; Minoru Uchida; Toru Otsu; Tatsuo Nagai; Hiroshi Morita

doi:10.4028/www.scientific.net/SSP.219.101

Paper Titles

Effect of Dissolved Oxygen for Advanced Wet Processing
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Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor
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Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam
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Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution
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Nickel Selective Etch for Contacts on Ge Based Devices
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Study of Wetting of Nanostructures Using Decoration by Etching
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Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region
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Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution

Abstract:

Recently, in the semiconductor manufacturing industry, NiPt silicide with high conductivity is adopted. However, when removing the NiPt residues in NiPt silicide processing, there is a possibility to damage other metals and silicide. Removal of residual substances must be done with special care. As a conventional method, processing by SPM has been reported by Chur [1]. However, when Pt content is 10% or more, in this method, the wafers must be processed at 150°C for a long period of time. Then, this method may damage a metal gate and silicide. As another method, aqua regia can be used. However, in this method, it takes long time to dissolve NiPt. This paper reports, newly develped Pt etching method using one-step processing of ESA (Electrolyzed Sulfuric Acid) and HCl, and two-step processing using ESA and HCl mixture after HNO₃and H₂O₂ mixture. This method can treat NiPt silicide at lower temperature within a shorter time than in conventional methods.

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Periodical:

Solid State Phenomena (Volume 219)

Pages:

101-104

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.101

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Online since:

September 2014

Authors:

Yuichi Ogawa*, Minoru Uchida, Toru Otsu, Tatsuo Nagai, Hiroshi Morita

Keywords:

Electrolyzed Sulfuric Acid, NiPt Etching

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References

[1] M.M. Chu, J.H. Chu: Japanese Jounal of Applied Physics 06GG16, 49, (2010).

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