Study of Wetting of Nanostructures Using Decoration by Etching

Guy Vereecke; Xiu Mei Xu; Els Kesters; Ishan Simms; Kathleen Nafus; Leander Haensel; Tae Gon Kim; Mark Lismont; Frank Holsteyns; Stefan De Gendt

doi:10.4028/www.scientific.net/SSP.219.111

Paper Titles

Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor
p.93

Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam
p.97

Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution
p.101

Nickel Selective Etch for Contacts on Ge Based Devices
p.105

Study of Wetting of Nanostructures Using Decoration by Etching
p.111

Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region
p.115

Freeze Drying of High Aspect Ratio Structures
p.119

Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch
p.125

Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process
p.128

HomeSolid State PhenomenaSolid State Phenomena Vol. 219Study of Wetting of Nanostructures Using...

Study of Wetting of Nanostructures Using Decoration by Etching

Abstract:

Recent studies have shown that even inherently hydrophilic surfaces (θ < 90 ̊) can become hydrophobic as a consequence of nanopatterning (1-4). This creates an issue in semiconductor manufacturing as aqueous chemistries (e.g. dilute HF solutions) are preferred to organic chemistries for their lower cost of ownership and greener environmental profile.

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Solid State Phenomena (Volume 219)

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111-114

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.111

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Online since:

September 2014

Authors:

Guy Vereecke, Xiu Mei Xu, Els Kesters, Ishan Simms, Kathleen Nafus, Leander Haensel, Tae Gon Kim, Mark Lismont, Frank Holsteyns, Stefan De Gendt

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Ellipsometry, Nanostructure, Wetting

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