Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch

Hui Hwan Lee; Dukmin Ahn; Seung Taek Lim; Taesung Kim

doi:10.4028/www.scientific.net/SSP.219.125

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Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch

Abstract:

Recent advances in semiconductor manufacturing process progress to reduce the size of flash memory devices in order to raise the degree of integration on a wafer. Due to this the active profile of the devices is becoming smaller [1]. This reduced active profile needs more constricted oxide thickness on silicon wafer, however if the oxide thickness is out of tolerance limits, can cause the device yield drop. Up to now, numerous studies have been carried out to improve only the uniformity of etch amount, so that the thickness profile was not changed during wet etch process [2]. Nevertheless, in real conditions, it is well known that the thickness profile before wet etch is not flat, e.g. it has V (center low), Ʌ (edge low) and M type shapes, etc. Accordingly, there is a need for developing the wet etch process to achieve the flat thickness profile. Hence, this paper report the improvement in wet etch process to control the in-wafer etch amount by utilizing DI-water dilution and controlled etchant arm movement.