Nickel Selective Etch for Contacts on Ge Based Devices

Farid Sebaai; Liesbeth Witters; Frank Holsteyns; Yoshida Yukifumi; Paul W. Mertens; Stefan De Gendt

doi:10.4028/www.scientific.net/SSP.219.105

Paper Titles

Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping
p.89

Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor
p.93

Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam
p.97

Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution
p.101

Nickel Selective Etch for Contacts on Ge Based Devices
p.105

Study of Wetting of Nanostructures Using Decoration by Etching
p.111

Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region
p.115

Freeze Drying of High Aspect Ratio Structures
p.119

Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch
p.125

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Nickel Selective Etch for Contacts on Ge Based Devices

Abstract:

of high mobility channels materials like Ge. The introduction of Ge as channel material has already shown significant interests in term of device performance enhancement [1,2]. However, the use of Ge in CMOS integration has raised new challenges in terms of clean or wet etch steps since significant Ge loss occurs when it oxidizes in aqueous media.

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Periodical:

Solid State Phenomena (Volume 219)

Pages:

105-108

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.105

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Online since:

September 2014

Authors:

Farid Sebaai*, Liesbeth Witters, Frank Holsteyns, Yoshida Yukifumi, Paul W. Mertens, Stefan De Gendt

Keywords:

Ge Voids, Hot HCl, Low O2 Conditions, NiGe Loss Reduction, Selective Etch

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References

[1] J. Mitard et al., First demonstration of strained Ge in STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects, VLSI(2013) T20.

Google Scholar

[2] P. Hashemi, J.L. Hoyt, High hole mobility strained Ge/Si0. 6Ge0. 4 P-MOSFETs with high-k/metal gate: role of Si cap thickness, Electron Device Letters 33(2), (2012).

DOI: 10.1109/led.2011.2176913

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[3] V. Carron, ECS Transactions, vol 11 (2), pp.309-320.

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