Process Control Challenges of Wet Etching Large MEMS Si Cavities

Ismail Kashkoush; Jennifer Rieker; Gim Chen; Dennis Nemeth

doi:10.4028/www.scientific.net/SSP.219.73

Paper Titles

Nanoscale Etching and Reoxidation of InAs
p.56

Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers
p.59

Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment
p.63

Surface Cleaning of Graphene by CO₂ Cluster
p.68

Process Control Challenges of Wet Etching Large MEMS Si Cavities
p.73

Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions
p.78

Advanced Monitoring of TMAH Solution
p.81

Effect of Dissolved Oxygen for Advanced Wet Processing
p.85

Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping
p.89

HomeSolid State PhenomenaSolid State Phenomena Vol. 219Process Control Challenges of Wet Etching Large...

Process Control Challenges of Wet Etching Large MEMS Si Cavities

Abstract:

Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentration and temperature, a large variety of silicon structures can be fabricated in a highly controllable and reproducible manner. Hence, anisotropic etching of <100> silicon has been a key process in common MEMS based technologies for realizing 3-D structures [1-4]. These structures include V-grooves for transistors, small holes for ink jets and diaphragms for MEMS pressure sensors as shown in Figure 1 [1]. The actual reaction mechanism has not been well understood and comprehensive physical and chemical models for the process have not yet been developed. With increasing numbers of MEMS applications, interest has grown in recent years for process modelling, simulation and software tools useful for the prediction of etched surface profiles [4-6].

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Periodical:

Solid State Phenomena (Volume 219)

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73-77

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https://doi.org/10.4028/www.scientific.net/SSP.219.73

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Online since:

September 2014

Authors:

Ismail Kashkoush, Jennifer Rieker, Gim Chen, Dennis Nemeth

Keywords:

Anisotropic Silicon Etching, CFD, Concentration Control, Flow Dynamics, MEMS, TMAH

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References

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