Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment

Marie Christine Roure; Sylvain Vialle; Mickaël Rebaud; Hervé Fontaine; Pascal Besson

doi:10.4028/www.scientific.net/SSP.219.63

Paper Titles

InGaAs (110) Surface Cleaning Using Atomic Hydrogen
p.47

Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid
p.52

Nanoscale Etching and Reoxidation of InAs
p.56

Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers
p.59

Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment
p.63

Surface Cleaning of Graphene by CO₂ Cluster
p.68

Process Control Challenges of Wet Etching Large MEMS Si Cavities
p.73

Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions
p.78

Advanced Monitoring of TMAH Solution
p.81

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Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment

Abstract:

III-V semiconductor compounds are increasingly studied for their interesting properties in the fields of microelectronics, optoelectronics, infrared detectors or solar cells. Firstly, they are promising candidates to replace silicon as a channel material. As CMOS scales beyond the 22 nm node it is widely expected that new higher mobility channel materials such as In_xGa_1-_xAs will have to be introduced [1]. On the other hand, III-V materials have a direct bandgap making them useful for optoelectronic devices or high-efficiency multijunction photovoltaic cells. For these applications InP, GaAs and their alloys as In_xGa_1-_xAs and Ga_xIn_1-_xP are investigated [2]. Depending on the targeted applications, several possible integration routes of III-V components could be considered: from 100 mm III-V substrates to III-V epitaxial layers grown on 300 mm silicon wafers as well as a few square centimetres chips bonded on 200 or 300 mm carrier wafers for photonics applications. In all cases, the manufacturing of devices requires a multitude of wet chemical steps including selective etching steps (from a few nanometres up to several microns) and cleaning steps (metallic or particles contamination removal).